Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2011

Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer

Résumé

A tunable vertical-cavity surface-emitting laser is fabricated where tunability is achieved with an intracavity layer of nematic liquid crystal and gain is provided by a semiconductor quantum well structure. The anisotropic liquid crystal layer enables a continuously tunable single-mode emission along the extraordinary axis of the layer. Polarization control is achieved when the layer thickness is such that the ordinary modes are out of the spectral gain region. Laser emission in the 1.5µm telecom wavelength range is demonstrated under optical pumping with a tuning range of more than 30 nm for an applied voltage of less than 3V.
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Dates et versions

hal-00600703 , version 1 (15-06-2011)

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Olivier Castany, Laurent Dupont, Ahmad Shuaib, Jean-Philippe Gauthier, Christophe Levallois, et al.. Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer. Applied Physics Letters, 2011, 98 (16), pp.161105. ⟨10.1063/1.3569591⟩. ⟨hal-00600703⟩
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