State of the art of high temperature power electronics - Archive ouverte HAL
Article Dans Une Revue Materials Science and Engineering: B Année : 2011

State of the art of high temperature power electronics

Cyril Buttay
Dominique Planson
Bruno Allard
Dominique Bergogne
  • Fonction : Auteur
  • PersonId : 902061
Pascal Bevilacqua
Charles Joubert
Mihai Lazar
Christian Martin
Hervé Morel
Dominique Tournier
Christophe Raynaud

Résumé

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150-200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

Dates et versions

hal-00597432 , version 1 (31-05-2011)

Identifiants

Citer

Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩
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