Low-temperature characterization and modeling of advanced GeOI pMOSFETs : mobility mechanism and origin of the parasitic conduction - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2010

Low-temperature characterization and modeling of advanced GeOI pMOSFETs : mobility mechanism and origin of the parasitic conduction

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hal-00596353 , version 1 (27-05-2011)

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  • HAL Id : hal-00596353 , version 1

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Van den Daele W., E. Augendre, Le Royer C., Damlencourt J.-F., B. Grandchamp, et al.. Low-temperature characterization and modeling of advanced GeOI pMOSFETs : mobility mechanism and origin of the parasitic conduction. Solid-State Electronics, 2010, 54 (2), pp.205-212. ⟨hal-00596353⟩
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