A compact model for Double gate carbon nanotube FET is presented. This compact model includes the most significant mechanism present in DGCNTFET such as Schottky barrier at the metallic-nanotube interface, charge, electrostatic modelling and quasi-ballistic transport through the Landauer equation. Then, this compact model is compared to measurement. Finally, a simple ring oscillator circuit has been simulated using ten identical devices highlighting new technology concepts.