Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 1 : Background and State of the Art of the IGBT - Archive ouverte HAL Accéder directement au contenu
Rapport Année : 2011

Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 1 : Background and State of the Art of the IGBT

Résumé

The objective of the present project is to investigate the limit of the SOA of the IGBT designed by Toyota Motor associated to Toyota CRDL Inc, in Aichi (Japan) for HEV application. The characteristics of this new device are: Trench IGBT chip, 900V voltage rating and 200A current rating.
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Dates et versions

hal-00584186 , version 1 (07-04-2011)

Identifiants

  • HAL Id : hal-00584186 , version 1

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Stephane Azzopardi, Adel Benmansour, J.-C. Martin. Failure Analysis of IGBT under High Temperature, High Current Density and High Switching Speed. Step 1 : Background and State of the Art of the IGBT. 2011. ⟨hal-00584186⟩
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