A Pressure Sensor Based on a HBAR Micromachined Structure - Archive ouverte HAL Access content directly
Conference Papers Year : 2010

A Pressure Sensor Based on a HBAR Micromachined Structure

Abstract

In this work, we propose a pressure sensor fabricated on compound LiNbO3/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO3/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.
Fichier principal
Vignette du fichier
Baron2010.pdf (220.33 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-00578203 , version 1 (22-04-2021)

Licence

Attribution

Identifiers

Cite

T. Baron, D. Gachon, J.-P. Romand, S. Alzuaga, S. Ballandras, et al.. A Pressure Sensor Based on a HBAR Micromachined Structure. 2010 IEEE International Frequency Control Symposium, Jun 2010, New Port Beach, United States. pp.361-364, ⟨10.1109/FREQ.2010.5556312⟩. ⟨hal-00578203⟩
128 View
71 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More