Communication Dans Un Congrès Année : 2010

A Pressure Sensor Based on a HBAR Micromachined Structure

Résumé

In this work, we propose a pressure sensor fabricated on compound LiNbO3/Silicon/Silicon substrates obtained by Au/Au bonding at room temperature and double face lapping/polishing of LiNbO3/silicon stack and a final gold bonding with a structured silicon wafer. Sensitivity of the final sensor to bending moments then is tested and results show pressure sensitivity of such devices.

Fichier principal
Vignette du fichier
Baron2010.pdf (220.33 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence

Dates et versions

hal-00578203 , version 1 (22-04-2021)

Licence

Identifiants

Citer

T. Baron, D. Gachon, J.-P. Romand, S. Alzuaga, S. Ballandras, et al.. A Pressure Sensor Based on a HBAR Micromachined Structure. 2010 IEEE International Frequency Control Symposium, Jun 2010, New Port Beach, United States. pp.361-364, ⟨10.1109/FREQ.2010.5556312⟩. ⟨hal-00578203⟩
244 Consultations
366 Téléchargements

Altmetric

Partager

  • More