Hf-based high-k materials for Si nanocrystal floating gate memories - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanoscale Research Letters Année : 2011

Hf-based high-k materials for Si nanocrystal floating gate memories

Résumé

Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.

Dates et versions

hal-00574358 , version 1 (07-03-2011)

Identifiants

Citer

Larysa Khomenkova, B.S. Sahu, A. Slaoui, Fabrice Gourbilleau. Hf-based high-k materials for Si nanocrystal floating gate memories. Nanoscale Research Letters, 2011, 6, pp.172. ⟨10.1186/1556-276X-6-172⟩. ⟨hal-00574358⟩
58 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More