Epitaxial growth of a silicene sheet - Archive ouverte HAL
Article Dans Une Revue Applied Physics Letters Année : 2010

Epitaxial growth of a silicene sheet

B. Lalmi
  • Fonction : Auteur
H. Oughaddou
H. Enriquez
  • Fonction : Auteur
A. Kara
  • Fonction : Auteur
S. Vizzini

Résumé

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp(2)-sp(3) hybridizations

Dates et versions

hal-00566385 , version 1 (16-02-2011)

Identifiants

Citer

B. Lalmi, H. Oughaddou, H. Enriquez, A. Kara, S. Vizzini, et al.. Epitaxial growth of a silicene sheet. Applied Physics Letters, 2010, 97 (22), pp.223109. ⟨10.1063/1.3524215⟩. ⟨hal-00566385⟩
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