Sub-terahertz resistive mixing in a AlGaN/GaN HEMT

An AlGaN/GaN based field effect transistor (FET) has been designed, fabricated, and used as a resistive mixer for heterodyne detection in the 140-220 GHz frequency range. A double VNA heterodyne measurement setup has been used in an on-wafer configuration to accurately quantify the incident radiation absorbed by the device. The appropriate selection of optimum biasing conditions for minimum conversion losses is investigated. 47.3 dB conversion losses are obtained at 150 GHz and the device linearity is confirmed.

Mots clés

Mixers FETs Logic gates Gallium nitride Linearity Aluminum gallium nitride

Domaines

Sciences de l'ingénieur [physics]

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https://hal.science/hal-00550020

Soumis le : jeudi 23 décembre 2010-10:59:14

Dernière modification le : mercredi 24 janvier 2024-09:54:18

Dates et versions

hal-00550020 , version 1 (23-12-2010)

Identifiants

HAL Id : hal-00550020 , version 1
DOI : 10.1109/ICIMW.2010.5612437

Citer

Kamel Madjour, Guillaume Ducournau, Sylvie Lepilliet, Tahsin Akalin, Jean-Francois Lampin, et al.. Sub-terahertz resistive mixing in a AlGaN/GaN HEMT. 35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612437⟩. ⟨hal-00550020⟩

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CNRS UNIV-VALENCIENNES IEMN UNIV-LILLE

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