Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2010

Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure

Résumé

Results of multiparticle Monte Carlo simulations of midinfrared quantum cascade lasers structure initially fabricated by Page et al. are presented. The main aim of this paper is to discuss in details how electric current flows through the structure and which subbands are involved in this process. Monte Carlo method allows to predict the electron population inversion between the lasing levels and gives microscopic insight into processes leading to such behavior. Importance of a subband belonging to the laser injector region, with energy slightly below the upper lasing level, is demonstrated. The electron–electron Coulomb interactions influence the shapes of electron distribution functions; the values of average electron energies and effective subbands’ temperatures are calculated.
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hal-00549482 , version 1 (25-05-2022)

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P. Borowik, Jean-Luc Thobel, L. Adamowicz. Monte Carlo based microscopic description of electron transport in GaAs/Al0.45Ga0.55As quantum-cascade laser structure. Journal of Applied Physics, 2010, 108 (7), pp.073106. ⟨10.1063/1.3488909⟩. ⟨hal-00549482⟩
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