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Article Dans Une Revue International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Année : 2010

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

Résumé

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in modelling the physics behind the operation of nanodevices, are presented by applying it to T-branch junctions based on InGaAs/InAlAs heterostructures. Simulation of a T-branch junction with a Schottky gate terminal is presented, using both 2D and 3D models, demonstrating the necessity of using 3D simulation models to study the physics of complex-geometry nanostructures.

Dates et versions

hal-00549480 , version 1 (22-12-2010)

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Citer

T. Sadi, Jean-Luc Thobel. A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩
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