Communication Dans Un Congrès Année : 1998

Characterization of ALN buffer layers on (0001)-sapphire substrates

Ym Le Vaillant
  • Fonction : Auteur
R. Bisaro
  • Fonction : Auteur
J. Olivier
  • Fonction : Auteur
O. Durand
  • Fonction : Auteur
Jy Duboz
  • Fonction : Auteur
Bernard Gil
Roger Aulombard
  • Fonction : Auteur
  • PersonId : 883802
  • IdRef : 068921616

Résumé

It is now established that low-temperature grown buffer layers are needed to improve the structural and electronic properties of GaN layers grown on sapphire. We studied the recrystallization of AIN buffer layers grown by low-pressure MOVPE as a function of annealing time. The Warren-Averbach method was applied to the analysis of broadening and line shape of the (0 0 0 2) and (0 0 0 4) X-ray diffraction peaks. This method yielded a separation of the grain size distribution from microstrain effects. The evolution of the relative frequency distribution of the grain size with annealing is correlated with atomic force microscopy experiments. The distribution of the reflecting-planes orientation was determined by X-ray rocking-curve experiments, (C) 1998 Elsevier Science B.V. All rights reserved.

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hal-00546761 , version 1 (14-12-2010)

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  • HAL Id : hal-00546761 , version 1

Citer

Ym Le Vaillant, R. Bisaro, J. Olivier, O. Durand, Jy Duboz, et al.. Characterization of ALN buffer layers on (0001)-sapphire substrates. 2nd International Conference on Nitride Semiconductors (ICNS 97), Oct 1997, TOKUSHIMA CITY (JAPAN), Japan. pp.282-286. ⟨hal-00546761⟩
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