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Communication Dans Un Congrès Année : 2001

Photonic crystal properties of GaN infilled artificial opals

Dominique Coquillat
  • Fonction : Auteur
  • PersonId : 869119
Rene Legros
  • Fonction : Auteur
  • PersonId : 865176
Sylvie Etienne-Calas
  • Fonction : Auteur
  • PersonId : 874195
J. Phalippou
  • Fonction : Auteur
Matthieu Moret
Olivier Briot
J. Manzanares-Martinez
  • Fonction : Auteur
David Cassagne
C. Jouanin
  • Fonction : Auteur

Résumé

We report the successful infilling of opal which consists of a fee arrangement of silica spheres with the semiconductor GaN by MOCVD technique. The angular dispersion of the Bragg diffracted light was studied for bare opal and GaN infilled opal by measuring reflection spectra at different external angles with respect to the [1 1 1] direction. The Bragg's law gives an estimation of 4.5% of void volume filled by the GaN. The crystal inhibits the yellow emission of GaN in the energies of the photonic gap. This decrease in the PL signal has one strong sensibility to the collection angle variation. This dependence is a signature of the GaN inside the opal voids.
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Dates et versions

hal-00546180 , version 1 (13-12-2010)

Identifiants

  • HAL Id : hal-00546180 , version 1

Citer

Dominique Coquillat, Rene Legros, Sylvie Etienne-Calas, J. Phalippou, Matthieu Moret, et al.. Photonic crystal properties of GaN infilled artificial opals. 25th International Conference on the Physics of Semiconductors (ICPS25), Sep 2000, OSAKA (JAPAN), Japan. pp.1741-1742. ⟨hal-00546180⟩
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