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Article Dans Une Revue Applied Physics Letters Année : 2010

Terahertz response of InGaAs field effect transistors in quantizing magnetic fields

Résumé

Terahertz (THz) detection by plasma wave mechanism in InGaAs field effect transistors is studied in high/quantizing magnetic fields regime. The correlation between the photovoltaic response and magnetoresistance is revealed. It allows explaining the dominant physical mechanism responsible for strong oscillations observed in the transistor THz photoresponse. The results indicate also a serious discrepancy between experimental data and existing theoretical model. (C) 2010 American Institute of Physics.
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Dates et versions

hal-00545623 , version 1 (10-12-2010)

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  • HAL Id : hal-00545623 , version 1

Citer

Oleg Klimenko, Yu. Mityagin, Hadley Videlier, Frederic Teppe, N. Dyakonova, et al.. Terahertz response of InGaAs field effect transistors in quantizing magnetic fields. Applied Physics Letters, 2010, 97 (2), pp.022111. ⟨hal-00545623⟩
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