Communication Dans Un Congrès Année : 2002

Process-induced strain in silicon-on-insulator materials

Résumé

We present a detailed investigation of the influence of oxidation and thinning processes on the in-plane stress in silicon-on-insulator materials. Combining double x-ray diffraction, Fourier transformed infrared and micro-Raman spectroscopy, we show that one can separately evaluate the stress present in the silicon over layer, the buried oxide and the underlying (handle) silicon wafer at any time of a device-forming process.

Fichier non déposé

Dates et versions

hal-00543870 , version 1 (06-12-2010)

Identifiants

  • HAL Id : hal-00543870 , version 1

Citer

Antoine Tiberj, B. Fraisse, Caroline Blanc, Sylvie Contreras, Jean Camassel. Process-induced strain in silicon-on-insulator materials. Conference on Extended Defects in Semiconductors (EDS 2002), Jun 2002, BOLOGNA (ITALY), France. pp.13411-13416. ⟨hal-00543870⟩
110 Consultations
0 Téléchargements

Partager

  • More