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Communication Dans Un Congrès Année : 2005

Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC

J. Pernot
  • Fonction : Auteur
Sylvie Contreras
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246
Jean-Louis Robert
  • Fonction : Auteur
  • PersonId : 884414

Résumé

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ± 10 %) with apparition of a large number of compensating centres in the implanted layers.
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hal-00543771 , version 1 (06-12-2010)

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  • HAL Id : hal-00543771 , version 1

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J. Pernot, Sylvie Contreras, Jean Camassel, Jean-Louis Robert. Electrical properties of p-type in-situ doped vs. Al-implanted 4H-SiC. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.401-404. ⟨hal-00543771⟩
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