Communication Dans Un Congrès Année : 2002

Growth at high rates and characterization of bulk 3C-SiC material

G. Ferro
  • Fonction : Auteur
C. Balloud
  • Fonction : Auteur
P. Vicente
  • Fonction : Auteur
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246
  • IdRef : 069193568
Y. Monteil
  • Fonction : Auteur

Résumé

Bulk 3C-SiC monocristalline material has been grown by high temperature vapor phase epitaxy on standard CVD 3C-SiC/Si seeds. Highly saturated silicon rich conditions have been used, rising the growth rate up to 70 mum/h at 1700degreesC. It drops down at 1600degreesC, reaching only 30 mum/h and less. Moreover, at this temperature and lower, Si droplets form on the surface while they disappear when the growth is performed at 1700degreesC. Photoluminescence measurements show that the 3C-SiC material grown at 1700degreesC is of optimum quality, with a quasi-complete absence of the defect-related G band.

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Dates et versions

hal-00543767 , version 1 (06-12-2010)

Identifiants

  • HAL Id : hal-00543767 , version 1

Citer

G. Ferro, C. Balloud, Sandrine Juillaguet, P. Vicente, Jean Camassel, et al.. Growth at high rates and characterization of bulk 3C-SiC material. 4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, LINKOPING (SWEDEN), France. pp.115-118. ⟨hal-00543767⟩
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