Communication Dans Un Congrès Année : 2005

Specific aspects of type II heteropolytype stacking faults in SiC

Résumé

Focussing on the fine structure of excitons bound to large 2-dimensional stacking faults in a 4H-SiC matrix, we show that the intrinsic type-II nature of the band alignment, combined with the effect of the spontaneous polarization, should result in a double bound-exciton signature per well. Then, we present the first observation of a 3C-QW sandwiched between two higher energy bandgap, polytypes in a 3C-SiC matrix.

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Dates et versions

hal-00541645 , version 1 (30-11-2010)

Identifiants

  • HAL Id : hal-00541645 , version 1

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Sandrine Juillaguet, Jean Camassel. Specific aspects of type II heteropolytype stacking faults in SiC. 5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna (ITALY), France. pp.335-340. ⟨hal-00541645⟩
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