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Article Dans Une Revue physica status solidi (a) Année : 2005

Technical aspects of < 1120 > 4H-SiC MOSFET processing

D. Tournier
  • Fonction : Auteur
V. Souliere
  • Fonction : Auteur
Sandrine Juillaguet
  • Fonction : Auteur
  • PersonId : 839245
Sylvie Contreras
M. Zielinski
  • Fonction : Auteur
P. Godignon
  • Fonction : Auteur
Y. Monteil
  • Fonction : Auteur
Jean Camassel
  • Fonction : Auteur
  • PersonId : 839246

Résumé

In order to process n-type channel MOSFETs on (11 (2) over bar0)-oriented 4H-SiC wafers one has to optimise, independently, many different steps. First is the growth of the active epitaxial layer, including the effect of p-type doping. Next is the oxidation and, finally, the n-type implantation for source and drain formation. In this work, we investigate the growth and doping of the p-type doped epitaxial layer on the (1120)-oriented substrate using, both, SIMS, low temperature photoluminescence measurements and Hall effect measurement to control the final doping level. Next we investigate the change in oxidation kinetics with respect to the conventional (0001) surfaces. Finally, we evaluate the efficiency of implantation and annealing processes. (c) 2005 WILEY-VCH Verlag GmbH I Co. KGaA, Weinheim.

Dates et versions

hal-00541644 , version 1 (30-11-2010)

Identifiants

Citer

Caroline Blanc, D. Tournier, V. Souliere, Sandrine Juillaguet, Sylvie Contreras, et al.. Technical aspects of < 1120 > 4H-SiC MOSFET processing. physica status solidi (a), 2005, 202, pp.680-685. ⟨10.1002/pssa.200460473⟩. ⟨hal-00541644⟩
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