Landau levels analysis by using symmetry properties of mesoscopic Hall bars
Résumé
We use the resistance fluctuations (RFs) appearing in the integer quantum Hall regime to scan the density of states of a very thin Hall bar. By applying a dc voltage on a top gate, we analyze the correlation properties of the various resistances as a function of the magnetic field and the carrier density. In the gate voltage-magnetic field plane, these RFs follow lines with slopes quantized in unit of filling factor and the slope of these RFs depends on their correlation properties.