Communication Dans Un Congrès Année : 2003

Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications

Résumé

Self ordered InN dots are grown by Metal Organic Vapor Phase Epitaxy onto GaN, with very low surface densities. Such nano-objects may be employed in the realization of single photon emitters, for quantum cryptography applications. The growth parameters, like growth temperature, V/III molar ratio and deposition time are investigated. First "large" dots are grown, in order to easily assess the material quality, and are studied both by X-ray diffraction and Raman spectroscopy. After optimising the growth conditions, we decrease the deposition time, in order to obtain nanometer size structures. (C) 2003 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

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Dates et versions

hal-00539936 , version 1 (25-11-2010)

Identifiants

  • HAL Id : hal-00539936 , version 1

Citer

Olivier Briot, Benedicte Maleyre, Sandra Ruffenach, C. Pinquier, François Demangeot, et al.. Metal organic vapor phase epitaxy and Raman spectroscopy of InN for nanostructure applications. 5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, NARA (JAPAN), Japan. pp.2851-2854. ⟨hal-00539936⟩
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