Article Dans Une Revue Semiconductor Science & Technology Année : 2009

Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers

Ferial Terki
Salam Charar
  • Fonction : Auteur
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J. Sadowski
  • Fonction : Auteur
Duncan Kennedy Maude
  • Fonction : Auteur

Résumé

Antisymmetric magneto-resistance anomalies generated by a reversal of the magnetization are studied in a number of GaMnAs/InGaAs layers with out-of-plane (easy axis) magnetization. The anomalies occur independent of the magnetic field orientation. This shows, that once a magnetic domain with reversed magnetization is nucleated, simply the presence of the domain wall between the longitudinal contacts is sufficient to give rise to the anomaly. Very different shapes for magneto-resistance anomaly can be observed experimentally depending upon the sample. They reflect the various magnetic domain structures present inside the layers during the magnetization reversal process.

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Dates et versions

hal-00539810 , version 1 (25-11-2010)

Identifiants

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Wilfried Desrat, Souleymane Kamara, Ferial Terki, Salam Charar, J. Sadowski, et al.. Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layers. Semiconductor Science & Technology, 2009, 24, pp.065011. ⟨10.1088/0268-1242/24/6/065011⟩. ⟨hal-00539810⟩
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