Euler buckling instability and enhanced current blockade in suspended single-electron transistors - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2011

Euler buckling instability and enhanced current blockade in suspended single-electron transistors

Résumé

Single-electron transistors embedded in a suspended nanobeam or carbon nanotube may exhibit effects originating from the coupling of the electronic degrees of freedom to the mechanical oscillations of the suspended structure. Here, we investigate theoretically the consequences of a capacitive electromechanical interaction when the supporting beam is brought close to the Euler buckling instability by a lateral compressive strain. Our central result is that the low-bias current blockade, originating from the electromechanical coupling for the classical resonator, is strongly enhanced near the Euler instability. We predict that the bias voltage below which transport is blocked increases by orders of magnitude for typical parameters. This mechanism may make the otherwise elusive classical current blockade experimentally observable.

Dates et versions

hal-00538567 , version 1 (22-11-2010)

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Guillaume Weick, Felix von Oppen, Fabio Pistolesi. Euler buckling instability and enhanced current blockade in suspended single-electron transistors. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83 (3), pp.035420 (14). ⟨10.1103/PhysRevB.83.035420⟩. ⟨hal-00538567⟩
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