Journal Articles Advanced Functional Materials Year : 2010

An Individual Carbon Nanotube Transistor Tuned by High Pressure

Sylvie Le Floch

Abstract

A transistor based on an individual multiwalled carbon nanotube is studied under high-pressure up to 1 GPa. Dramatic effects are observed, such as the lowering of the Schottky barrier at the gold-nanotube contacts, the enhancement of the intertube conductance, including a discontinuity related to a structural transition, and the decrease of the gate hysteresis of the device.

Dates and versions

hal-00534234 , version 1 (09-11-2010)

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Cite

Christophe Caillier, Anthony Ayari, Vincent Gouttenoire, Jean-Michel Benoit, Vincent Jourdain, et al.. An Individual Carbon Nanotube Transistor Tuned by High Pressure. Advanced Functional Materials, 2010, 20, pp.3330-3335. ⟨10.1002/adfm.201000398⟩. ⟨hal-00534234⟩
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