Kirchhoff's generalised law applied to amorphous silicon / crystalline silicon heterostructures
Résumé
The electro- and photoluminescence spectra of amorphous silicon / crystalline silicon heterostructures and solar cells are determined by emission from the crystalline-silicon layer and are computed with Kirchhoff's generalised law. The interface defect density strongly influences the luminescence yield which may be used to monitor the interface quality. Based on a comparison between numerical and analytically determined spectra, the temperature dependence of experimental electroluminescence and photoluminescence spectra of these silicon heterostructures is analysed. We find a clear indication of the validity of Kirchhoff's generalised law for the luminescence emission from these silicon structures and conclude that it can be applied between 112 K and 363 K without further modification in order to account for the indirect nature of the optical transitions in crystalline silicon.
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