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Article Dans Une Revue Molecular Simulation Année : 2009

A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs

Résumé

We present an analytical model for the subthreshold characteristic of ultra-thin Independent Double-Gate (IDG) MOSFET working in the ballistic regime. This model takes into account short-channel effects, quantization effects and source-to-drain tunneling (WKB approximation) in the expression of the subthreshold drain current. Important device parameters, such as off-state current or subthreshold swing, can be easily evaluated through this full analytical approach. The model can be successfully implemented in a TCAD circuit simulator for the simulation of IDG MOSFET based-circuits.

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Dates et versions

hal-00515080 , version 1 (04-09-2010)

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Daniela Munteanu, Mathieu Moreau, Jean-Luc Autran. A Compact Model for the Ballistic Subthreshold Current in Ultra-Thin Independent Double-Gate MOSFETs. Molecular Simulation, 2009, 35 (06), pp.491-497. ⟨10.1080/08927020902801548⟩. ⟨hal-00515080⟩
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