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Article Dans Une Revue Solid-State Electronics Année : 2010

Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs

Résumé

We report on the development of Time-resolved Ultraviolet Micro-Raman Scattering to measure transient self-heating effects in semiconductor devices. Temperature measurements are performed on AlGaN/GaN High-electron-mobility transistors (HEMTs) grown on SiC substrate. Ultraviolet excitation probes the temperature close to the AlGaN/GaN interface, in the two-dimensional electron gas (2DEG) region. This new measurement setup allows us to obtain a temporal, spectral and measured spatial resolution of 200 ns, 0.8 cm−1 and 1.7 μm respectively. The temperature accuracy is better than 5–10 K. Temperature evolution as function of time has been studied. Self-heating effects are immediately observed. A fast thermal response is demonstrated during the first microsecond after switching the device ON then, a slower thermal response is established during the second microsecond.

Dates et versions

hal-00514166 , version 1 (01-09-2010)

Identifiants

Citer

Ophélie Lancry, Emmanuelle Pichonat, Julien Réhault, Myriam Moreau, Raphaël Aubry, et al.. Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs. Solid-State Electronics, 2010, 54, pp.1434 - 1437. ⟨10.1016/j.sse.2010.05.029⟩. ⟨hal-00514166⟩
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