Modelling of the two-state lasing and the turn-on delay in 1.55 mm InAs/InP (113)B quantum dot lasers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IET Optoelectronics Année : 2007

Modelling of the two-state lasing and the turn-on delay in 1.55 mm InAs/InP (113)B quantum dot lasers

Résumé

Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55 mum InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed
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Dates et versions

hal-00502375 , version 1 (13-07-2010)

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Kiril Veselinov, Frédéric Grillot, A. Bekiarski, Slimane Loualiche. Modelling of the two-state lasing and the turn-on delay in 1.55 mm InAs/InP (113)B quantum dot lasers. IET Optoelectronics, 2007, 153 (6), pp.308-311. ⟨10.1049/ip-opt:20060043⟩. ⟨hal-00502375⟩
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