Gain compression and above-threshold linewidth enhancement factor in 1.3μm InAs-GaAs quantum dot lasers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Journal of Quantum Electronics Année : 2008

Gain compression and above-threshold linewidth enhancement factor in 1.3μm InAs-GaAs quantum dot lasers

Résumé

Quantum-dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor (alphaH-factor). Although many breakthroughs have been demonstrated, the maximum modulation bandwidth remains limited in QD devices, and a strong damping of the modulation response is usually observed pointing out the role of gain compression. This paper investigates the influence of the gain compression in a 1.3-mum InAs-GaAs QD laser and its consequences on the above-threshold alphaH-factor. A model is used to explain the dependence of the alphaH-factor with the injected current and is compared with AM/FM experiments. Finally, it is shown that the higher the maximum gain, the lower the effects of gain compression and the lower the alphaH-factor. This analysis can be useful for designing chirpless QD lasers with improved modulation bandwidth as well as for isolator-free transmission under direct modulation.
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Dates et versions

hal-00502372 , version 1 (13-07-2010)

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Frédéric Grillot, Béatrice Dagens, Jean-Guy Provost, H. Su, L. F. Lester. Gain compression and above-threshold linewidth enhancement factor in 1.3μm InAs-GaAs quantum dot lasers. IEEE Journal of Quantum Electronics, 2008, 44 (10), pp.946-951. ⟨10.1109/JQE.2008.2003106⟩. ⟨hal-00502372⟩
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