Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots
Résumé
We present photocurrent measurements of InAs/InGaAsP quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the 300 K spectrum we deduce the ground and first excited states of the dots. Their energies are consistent with photoluminescence spectroscopy. Absorption coefficient was extracted from photocurrent.