Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots - Archive ouverte HAL
Communication Dans Un Congrès CONFERENCE PROCEEDINGS - INDIUM PHOSPHIDE AND RELATED MATERIALS Année : 2008

Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots

Résumé

We present photocurrent measurements of InAs/InGaAsP quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the 300 K spectrum we deduce the ground and first excited states of the dots. Their energies are consistent with photoluminescence spectroscopy. Absorption coefficient was extracted from photocurrent.
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Dates et versions

hal-00501639 , version 1 (12-07-2010)

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Soline Richard, Jean-Philippe Burin, Christophe Labbe, Charles Cornet, Hervé Folliot, et al.. Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots. Indium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩. ⟨hal-00501639⟩
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