Self-sustained etch masking: a new concept to initiate the formation of nanopatterns during ion erosion
Résumé
Materials allowing for rapid and reliable formation of nanopatterned surfaces is an important issue in many areas of science today. Self-organized pattern formation induced by ion erosion is a promising bottom-up approach. In the case of the III-V semiconductors, this method can lead to several remarkable structure types even if the formation mechanism has yet to be found. Through high resolution chemical scanning transmission electron imaging and x-ray photo emission, we show that the capacity of III-V semiconductors to pattern under ion erosion is linked to the phase diagram of these materials. We suggest an original scenario to explain the specific behavior of III-V semiconductors, where one species segregates and acts as a continuously resupplied etching shield. This new concept is at variance with the standard Bradley Harper model and opens new perspectives for bottom up patterning of compound materials.
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