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Article Dans Une Revue IEEE Journal of Selected Topics in Quantum Electronics Année : 2009

Optical feedback tolerance of quantum dot and quantum dash based semiconductor lasers operating at 1.55µm

Résumé

This paper reports on the tolerance of low-dimensional InAs/InP quantum-dash- and quantum-dot-based semiconductor lasers to optical feedback in the 1.55 mum window. For this purpose, the onset of coherence collapse (CC) is experimentally determined and systematically investigated as a function of different laser parameters, such as the injection current, differential gain, temperature, and photon lifetime. It is in particular found that for both material systems the onset of CC increases with the injection current in a similar way to bulk or quantum-well-based devices. Of most importance, we experimentally show that the differential gain plays a key role in the optical feedback tolerance. It is indeed shown to determine not only the range of the onset of CC but also the dependence of this threshold both on the temperature and laser cavity length. Increasing the operating temperature from 25degC to 85degC leads to a decrease of the onset of CC by a factor of only ~3 dB, well accounted for by the variation of the differential gain in this temperature range. We find no difference in the tolerance to external reflections of a truly 3-D confined quantum-dot-based laser and a quantum dash device of the same cavity length, which have similar differential gains. A tentative analysis of our data is finally carried out, based on existing models.
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Dates et versions

hal-00496984 , version 1 (02-07-2010)

Identifiants

Citer

S. Azouigui, B. Dagens, François Lelarge, J.G. Provost, D. Make, et al.. Optical feedback tolerance of quantum dot and quantum dash based semiconductor lasers operating at 1.55µm. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15 (3), pp.764. ⟨10.1109/JSTQE.2009.2013870⟩. ⟨hal-00496984⟩
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