Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2007

Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers

Résumé

The threshold current and its radiative component in 1.5 µm InAs/InP (311)B quantum dot lasers are measured as a function of the temperature. Despite an almost insensitive radiative current, the threshold current increases steeply with temperature leading to a characteristic temperature T0=55K around 290K. Direct observation of spontaneous emission from the wetting layer shows that some leakage from the dots to the wetting layer occurs in these devices. However, a decrease in the threshold current as a function of pressure is also measured suggesting that Auger recombination dominates the non radiative current and temperature sensitivity of these devices.

Dates et versions

hal-00495725 , version 1 (28-06-2010)

Identifiants

Citer

Nicolas Massé, Estelle Homeyer, I. P. Marko, A.R. Adams, S.J. Sweeney, et al.. Temperature and pressure dependence of the recombination processes in 1.5 µm InAs/InP(311)B quantum dot lasers. Applied Physics Letters, 2007, 91 (13), pp.131113. ⟨10.1063/1.2790777⟩. ⟨hal-00495725⟩
33 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More