1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasers - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasers

Résumé

We report the achievement of a 1.55 µm RT continuous wave (CW) operation of InAs/InP(100) quantum dash ridge lasers. The threshold current reaches a value of 95 mA. The maximum output power and the external efficiency are respectively 2.5 mW and 0.07 W/A per facet for a cavity with 1 mm length and 4 µm wide.
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Dates et versions

hal-00494186 , version 1 (22-06-2010)

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  • HAL Id : hal-00494186 , version 1

Citer

Rozenn Piron, Dayong Zhou, Madhoussoudhana Dontabactouny, Olivier Dehaese, Thomas Batte, et al.. 1.55 µm room-temperature continuous wave operation of InAs/InP (100) quantum dash ridge lasers. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00494186⟩
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