Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density

Résumé

We demonstrate the achievement of multiple stacked InAs quantum dash and quantum dot lasers. The threshold current density reaches a minimum value of 680 A/cm2 for quantum dash lasers on InP (100) and 170 A/cm2 for quantum dot lasers on InP (311)B.

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Optique / photonique

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https://hal.science/hal-00494175

Soumis le : mardi 22 juin 2010-11:33:19

Dernière modification le : lundi 16 septembre 2024-17:52:04

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Dates et versions

hal-00494175 , version 1 (22-06-2010)

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  • HAL Id : hal-00494175 , version 1

Citer

Dayong Zhou, Rozenn Piron, Madhoussoudhana Dontabactouny, Estelle Homeyer, Olivier Dehaese, et al.. Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current density. SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1. ⟨hal-00494175⟩

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UNIV-RENNES1 CNRS INSA-RENNES FOTON FOTON-INSA FOTON_OHM UR1-MATH-STIC UNIV-RENNES INSA-GROUPE UR1-MATH-NUM
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