Demonstration of a Low Threshold Current in 1.54 µm InAs/InP(311)B Quantum Dot Laser with Reduced Quantum Dot Stacks
Résumé
This article reports the improvement of broad area lasers epitaxially grown on InP(311)B substrate. Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QDs) up to 10 11 cm-2 is obtained. The device, which contains only two stacks of QDs, exhibits a ground state laser emission at 1.54 µm at room temperature associated with a threshold current density as low as 170 A/cm2. Experimental results also demonstrate a modal gain greater than 8 cm-1 per QD plane.