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Article Dans Une Revue Electronics Letters Année : 2009

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

Résumé

Low-threshold current density InAs quantum dash lasers are demonstrated by reducing the energy inhomogeneous broadening through an optimised double-cap technique. A threshold current density for an infinite cavity length of 225 A/cm² (~45 A/cm² per stack) is obtained from a five-stack laser structure. The characteristic temperature above room temperature is 52 K, and this relatively low value results from the carrier leakage from the dash into the barrier (waveguide) region.
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hal-00493000 , version 1 (17-06-2010)

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Dayong Zhou, Rozenn Piron, Madhoussoudhana Dontabactouny, Olivier Dehaese, Frederic Grillot, et al.. Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy. Electronics Letters, 2009, 45 (1), pp.50 - 51. ⟨10.1049/el:20093066⟩. ⟨hal-00493000⟩
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