Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Indium Phosphide and Related Materials, 2008. IPRM 2008. IEEE international conference. Année : 2008

Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm

Résumé

The authors demonstrate the achievement of InAs quantum dash lasers grown by molecular beam epitaxy (MBE) on InP (100) substrate. The lasers exhibit lasing wavelength at 1.55 µm by multiple stacked dash layers from two to five, with ground state lasing at room temperature. The threshold current density reaches a minimum value of 683 A/cm² from double quantum dash structure, resulting from the trade-off between the low number of carrier requirement in the InAs active region and the reduction of carrier concentration in the optical waveguide.
Fichier non déposé

Dates et versions

hal-00492842 , version 1 (17-06-2010)

Identifiants

Citer

Dayong Zhou, Rozenn Piron, Frederic Grillot, Olivier Dehaese, Estelle Homeyer, et al.. Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm. Indium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩. ⟨hal-00492842⟩
74 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More