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Communication Dans Un Congrès Année : 2009

Light emitting diodes on silicon substrates: preliminary results

Alain Moréac

Résumé

We propose to grow III-V quantum nanostructures by molecular beam epitaxy on GaP substrates and GaP layers almost lattice-matched to Si. These nanostructures will be used as active zone in light emitters on silicon. We first present photoluminescence results for GaAsP/GaP QWs. A comparison with electronic band lineups is performed. The GaP/Si interface is studied by Raman spectroscopy.
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Dates et versions

hal-00491905 , version 1 (14-06-2010)

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Alexandre Bondi, Weiming Guo, Laurent Pedesseau, Soline Richard, Hervé Folliot, et al.. Light emitting diodes on silicon substrates: preliminary results. TNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩. ⟨hal-00491905⟩
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