Light emitting diodes on silicon substrates: preliminary results
Résumé
We propose to grow III-V quantum nanostructures by molecular beam epitaxy on GaP substrates and GaP layers almost lattice-matched to Si. These nanostructures will be used as active zone in light emitters on silicon. We first present photoluminescence results for GaAsP/GaP QWs. A comparison with electronic band lineups is performed. The GaP/Si interface is studied by Raman spectroscopy.
Domaines
Optique / photonique| Origine | Fichiers produits par l'(les) auteur(s) |
|---|