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Communication Dans Un Congrès Année : 2009

Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm

Résumé

We report the growth of InAs quantum dots (QDs) on (001) and (113)B InP substrates by molecular beam epitaxy. For the (113)B orientation, a very high QDs density (1.6E11cm-2) with a QDs self-organization have been demonstrated, thus showing high optical efficiency. More recently, improvements of the QDs density have been brought on conventional (001) InP substrate. A maximum QDs density of 9E10 cm-2 has been obtained using a low arsine flow rate and substrates with a slight misorientation.
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hal-00491459 , version 1 (14-06-2010)

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  • HAL Id : hal-00491459 , version 1

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Georges Elias, Charles Cornet, Philippe Caroff, Christophe Levallois, Antoine Létoublon, et al.. Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm. Second French Research Organizations - Tohoku University Joint Workshop on Frontier Materials, Nov 2009, Sendai, Japan. p-23. ⟨hal-00491459⟩
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