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Article Dans Une Revue Japanese Journal of Applied Physics, part 2 : Letters Année : 2005

Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Résumé

The As flux effect on InAs quantum dots formed by gas source molecular beam epitaxy on InP substrates, oriented following the (311)B crystallographic direction has been studied. Atomic force microscopy images show that the quantum dot (QD) density dramatically increases and quantum dot sizes decrease, when decreasing the As pressure. Moreover, the size dispersion is narrowed. Photoluminescence measurements on the high QD density samples is shifted to higher energy, toward the telecommunication important 1.55 µm emission.
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hal-00486146 , version 1 (25-05-2010)

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Philippe Caroff, Nicolas Bertru, Alain Le Corre, Olivier Dehaese, Tony Rohel, et al.. Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm. Japanese Journal of Applied Physics, part 2 : Letters, 2005, 44, pp.1069. ⟨10.1143/JJAP.44.L1069⟩. ⟨hal-00486146⟩
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