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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2004

Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots

Andrea Fiore
  • Fonction : Auteur
M. Rosetti
  • Fonction : Auteur
Blandine Alloing
  • Fonction : Auteur
J. X. Chen
  • Fonction : Auteur
L. Geelharr
  • Fonction : Auteur
H. Riechert
  • Fonction : Auteur

Résumé

We present a comparative study of carrier diffusion in semiconductor heterostructures with different dimensionality [InGaAs quantum wells (QWs), InAs quantum dots (QDs), and disordered InGaNAs QWs (DQWs)]. In order to evaluate the diffusion length in the active region of device structures, we introduce a method based on the measurement of the current-voltage and light-current characteristics in light-emitting diodes where current is injected in an area <1 μm2. By analyzing the scaling behavior of devices with different sizes, we deduce the effective active area, and thus the diffusion length. A strong reduction in the diffusion length is observed going from QWs (Ld≈2.7 μm) to QDs (Ld<100 nm), DQWs being an intermediate case (Ldiff≈0–200 nm depending on the carrier density). These results show that lateral composition fluctuations, either intended or unintended, produce strong carrier localization and significantly affect the carrier profile in a device even at room temperature

Dates et versions

hal-00485772 , version 1 (21-05-2010)

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Citer

Andrea Fiore, M. Rosetti, Blandine Alloing, Cyril Paranthoen, J. X. Chen, et al.. Carrier diffusion in low-dimensional semiconductors: A comparison of quantum wells, disordered quantum wells, and quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.205311. ⟨10.1103/PhysRevB.70.205311⟩. ⟨hal-00485772⟩
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