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Communication Dans Un Congrès Physica E: Low-dimensional Systems and Nanostructures Année : 2003

Equifrequency surfaces in GaN/sapphire photonic crystals

D. Peyrade
J. Torres
D. Coquillat
  • Fonction : Auteur
  • PersonId : 869119
R. Legros
  • Fonction : Auteur
  • PersonId : 865176
J.P Lascaray
  • Fonction : Auteur
  • PersonId : 865177
L. Manin-Ferlazzo
  • Fonction : Auteur
S. Ruffenach
  • Fonction : Auteur
  • PersonId : 860799
O. Briot
E. Centeno
  • Fonction : Auteur
  • PersonId : 865110
D. Cassagne
Jp Albert
  • Fonction : Auteur
  • PersonId : 869120

Résumé

Photonic crystals are a new class of materials where photonic band gaps, large dispersion and anisotropy occur. By exploiting these properties GaN photonic crystals should have important potential for optoelectronic applications, principally in the areas of high-efficiency light emitters and second-harmonic generators. We present measurements of the equifrequency surfaces of the radiative Bloch modes for a photonic crystal etched in a GaN/sapphire film. The photonic band structure is calculated by using a scattering matrix method that reproduces well the anisotropy of the equifrequency surfaces exhibited by the photonic crystal. (C) 2002 Elsevier Science B.V. All rights reserved.
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Dates et versions

hal-00477213 , version 1 (28-04-2010)

Identifiants

  • HAL Id : hal-00477213 , version 1

Citer

D. Peyrade, J. Torres, D. Coquillat, R. Legros, J.P Lascaray, et al.. Equifrequency surfaces in GaN/sapphire photonic crystals. International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02), Jul 2002, TOULOUSE (FRANCE), France. pp.423-425. ⟨hal-00477213⟩
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