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Communication Dans Un Congrès Année : 2009

Resonant gate drive for silicon integrated DC/DC converters

Malal Bathily
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Bruno Allard
Jérôme Verdier

Résumé

Many studies concern high-switching frequency, monolithic DC/DC converters in the 1-W range for battery-powered handsets (up to 5 V-input voltage). The major limitation in the design of hard-switching, high-frequency DC/DC SMPSs comes from the increased switching losses in the 100 MHz range of switching frequency. The contribution of a robust resonant gate driver is considered for the reduction of the power MOSFET gate switching losses for a 200 MHz switching frequency SMPS. Simulation results show a reasonable reduction of 20 to 30% in switching losses with respect to a standard optimized gate driver and for an acceptable silicon area impact. The SMPS power losses could be reduced by 5% with an acceptable impact on silicon area. A prototype has been designed in 0.25-mum BiCMOS technology.
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Dates et versions

hal-00476272 , version 1 (25-04-2010)

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Malal Bathily, Bruno Allard, Jérôme Verdier, Frédéric Hasbani. Resonant gate drive for silicon integrated DC/DC converters. ECCE, Sep 2009, San José, CA, United States. pp.3876 - 3880, ⟨10.1109/ECCE.2009.5316115⟩. ⟨hal-00476272⟩
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