Increase in the power density of power modules requires an interconnection technology alternative to wire bonding technology. Emerging interconnection technologies allow a three-dimensional packaging of power modules. A proposal of interconnection solution for the power semiconductor dice is presented here : it is based on copper micro-posts that are electroplated on top side of the die. The die with its micro-posts is then attached to a top Direct Bonding Copper substrate using a copper/tin transient liquid phase technique. The assembly of the backside of the die to a bottom Direct Bonding Copper substrate is processed concurrently using the same transient liquid phase technique. The benefits or limitations of the substrate on the assembly are not discussed in this paper. Manufacturing and electrical characterization of a power semiconductor die with the micro-posts interconnection is presented in detail.