2x2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications
Résumé
This letter demonstrates a 2 × 2 low optical crosstalk and low power consumption switching matrix device based on carrier-induced effects on an InP substrate. The matrix device comprises two digital optical switches (DOSs) with a wide multimode Y-junction associated with a sinusoidal passive integrated optical circuit with an optimized X-crossing. The passive structure was designed using a two-dimensional beam propagation method (BPM) and the entire InP-InGaAsP-InP DOS was designed using a semivectorial three-dimensional BPM. The fabricated 2 × 2 InP switching matrix heterostructure with λg = 1.3 μm exhibits optical crosstalk as low as -30.5 dB for drive current of 52 mA at 1.55-μm wavelength. Maximum crosstalk change of 4 dB is measured under optical polarization variation.