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Article Dans Une Revue Applied Physics Letters Année : 2009

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

Résumé

This paper presents the high frequency performance of single-walled carbon nanotube (SWNT) field-effect transistors, with channel consisting of dense networks of high purity semiconducting SWNTs. Using SWNT samples containing 99% pure semiconducting SWNTs, we achieved operating frequencies above 80 GHz. This record frequency does not require aligned SWNTs, thus demonstrating the remarkable potential of random networks of sorted SWNTs for high frequency electronics.
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Dates et versions

hal-00469685 , version 1 (31-05-2022)

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L. Nougaret, H. Happy, Gilles Dambrine, Vincent Derycke, J.P. Bourgoin, et al.. 80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes. Applied Physics Letters, 2009, 94 (24), pp.243505. ⟨10.1063/1.3155212⟩. ⟨hal-00469685⟩
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