Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Crystal Growth Année : 2009

Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy

Résumé

Transmission electron microscopy (TEM) techniques are applied to characterize the interfaces of epitaxial III-V semiconductor heterostructures with high spatial resolution and to analyze compositional variations at interfaces. As expected, realistic interfaces of compound semiconductors are not chemically sharp but there is a transition region at the interface. The functional dependence of the smooth change in composition is sigmoidal and can be described using an analytical expression, thus enabling a quantitative characterization of the interface width. The model gives a very good description of the distribution profiles and applies to several material systems, including the interfaces of As-based alloys and those of the non-common-atom InAs/GaSb short-period superlattices. The analysis of (Ga,In)(N,As)/GaAs quantum wells reveals that there is a connection between the interface properties in this material system and the miscibility gap of the alloy. (C) 2008 Elsevier B.V. All rights reserved.

Dates et versions

hal-00462048 , version 1 (08-03-2010)

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E. Luna, F. Ishikawa, B. Satpati, Jean-Baptiste Rodriguez, Eric Tournié, et al.. Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy. Journal of Crystal Growth, 2009, 311, pp.1739-1744. ⟨10.1016/j.jcrysgro.2008.10.039⟩. ⟨hal-00462048⟩
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