Hydrogen Silsesquioxane-Based Hybrid Electron Beam And Optical Lithography For High Density Circuit Prototyping - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics Année : 2009

Hydrogen Silsesquioxane-Based Hybrid Electron Beam And Optical Lithography For High Density Circuit Prototyping

Johan Chang
Nicholas Fuller
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Maxime Darnon

Résumé

The authors report on a hybrid lithography process that integrates electron beam lithography (EBL) and optical photolithography. To maximize resolution and density, the EBL exposure is performed using a hydrogen silsesquioxane-based resist, while the photolithographic exposure is performed using standard positive or negative tone 248nm photoresists. Both exposures take place on a common underlayer consisting of an antireflective coating (ARC). During pattern transfer into the ARC layer, a composite image of the two lithographic exposures is formed creating a robust and versatile etch mask for further pattern transfer into the substrate. They demonstrate the utility of this technique by using it to pattern the active, gate, and wiring levels of complementary metal oxide semiconductor devices and circuits consisting of trigated Fin-based field effect transistors. These devices have a minimum active area pitch of 50nm, minimum gate pitch of 90nm, and achieve densities suitable for 15nm node static random access memory cells. Details of the exposure process and device fabrication are discussed along with electrical results from the resulting devices and circuits built using this technique.
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hal-00461129 , version 1 (05-01-2024)

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Michael A Guillorn, Johan Chang, Nicholas Fuller, Jayesh Patel, Maxime Darnon, et al.. Hydrogen Silsesquioxane-Based Hybrid Electron Beam And Optical Lithography For High Density Circuit Prototyping. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2009, 27 (6), pp.2588-2592. ⟨10.1116/1.3246357⟩. ⟨hal-00461129⟩
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